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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSD2058 DESCRIPTION With TO-220F package Complement to type KSB1366 APPLICATIONS With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS MAX 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 60 7 Emitter-base voltage Open collector Collector current 3 Base current Ta=25ae 0.5 1.5 Collector dissipation TC=25ae 25 150 -55~150 UNIT V V V A A PC W Tj Tstg Junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 MIN 60 KSD2058 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB TYP. MAX UNIT V 1.5 3.0 10 1 300 3.0 35 |I V V A mA MHz pF Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time 0.65 1.3 Storage time Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15| 0.65 |I |I |I s s s hFE Classifications O 60-120 Y 100-200 G 150-300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE KSD2058 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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